Manufacturer Product Number:
2N6661-E3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
2N6661-E3-DG
Description:
MOSFET N-CH 90V 860MA TO39
Detailed Description:
N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
Inventory:
12905458
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2N6661-E3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
90 V
Current - Continuous Drain (Id) @ 25°C
860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
725mW (Ta), 6.25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AD, TO-39-3 Metal Can
Base Product Number
2N6661
Additional Information
Standard Package
100
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
2N6661
MANUFACTURER
Solid State Inc.
QUANTITY AVAILABLE
6694
DiGi PART NUMBER
2N6661-DG
UNIT PRICE
4.60
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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