2SA1930(Q,M)
Manufacturer Product Number:

2SA1930(Q,M)

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

2SA1930(Q,M)-DG

Description:

TRANS PNP 180V 2A TO220NIS
Detailed Description:
Bipolar (BJT) Transistor PNP 180 V 2 A 200MHz 2 W Through Hole TO-220NIS

Inventory:

12891716
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2SA1930(Q,M) Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
180 V
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Current - Collector Cutoff (Max)
5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
2 W
Frequency - Transition
200MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SA1930

Additional Information

Other Names
2SA1930(Q,M)-DG
2SA1930QM
Standard Package
500

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075

Alternative Models

PART NUMBER
TTA004B,Q
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
0
DiGi PART NUMBER
TTA004B,Q-DG
UNIT PRICE
0.12
SUBSTITUTE TYPE
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