PHE13003A126
Manufacturer Product Number:

PHE13003A126

Product Overview

Manufacturer:

NXP USA Inc.

DiGi Electronics Part Number:

PHE13003A126-DG

Description:

NOW WEEN - PHE13003A - POWER BIP
Detailed Description:
Bipolar (BJT) Transistor NPN 400 V 1 A 2.1 W Through Hole TO-92-3

Inventory:

12947564
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PHE13003A126 Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
NXP Semiconductors
Packaging
-
Series
-
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 750mA
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 400mA, 5V
Power - Max
2.1 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3

Datasheet & Documents

Additional Information

Other Names
WENNXPPHE13003A126
2156-PHE13003A126
Standard Package
4,609

Environmental & Export Classification

ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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